
NPN silicon bipolar junction transistor in a DPAK package, featuring a 45V collector-emitter breakdown voltage and 3A continuous collector current. This surface-mount device offers a maximum power dissipation of 3.9W and a transition frequency of 150MHz. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Diodes ZXT690BKTC technical specifications.
Download the complete datasheet for Diodes ZXT690BKTC to view detailed technical specifications.
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