PNP Silicon Bipolar Junction Transistor (BJT) in a DPAK package, designed for surface mounting. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 40V. Offers a transition frequency of 100MHz and a maximum power dissipation of 3.9W. Operates across a wide temperature range from -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
Frequency100MHz
PackageDPAK
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Diodes ZXT790AKTC technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-260mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
450mV
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
2.39mm
Lead Free
Lead Free
Length
6.73mm
Max Breakdown Voltage
40V
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.9W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3.9W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-40V
Weight
0.009185oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXT790AKTC Datasheet
Download the complete datasheet for Diodes ZXT790AKTC to view detailed technical specifications.
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