NPN silicon bipolar junction transistor (BJT) in a DPAK surface-mount package. Features a continuous collector current of 7A, collector-emitter breakdown voltage of 30V, and a transition frequency of 100MHz. Offers a maximum power dissipation of 4.2W and operates within a temperature range of -55°C to 150°C. This lead-free, RoHS-compliant component is supplied on tape and reel.
Frequency100MHz
PackageDPAK
Current Rating7A
MountingSurface Mount
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Technical Specifications
Diodes ZXT849KTC technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
230mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
280mV
Continuous Collector Current
7A
Current Rating
7A
Emitter Base Voltage (VEBO)
7V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
2.39mm
Lead Free
Lead Free
Length
6.73mm
Max Breakdown Voltage
30V
Max Collector Current
7A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
4.2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
30V
Weight
0.012346oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXT849KTC Datasheet
Download the complete datasheet for Diodes ZXT849KTC to view detailed technical specifications.
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