PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 6A continuous collector current and 60V collector-emitter breakdown voltage. Operates with a transition frequency of 120MHz and a maximum power dissipation of 4.2W. Packaged in a DPAK case, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
Frequency120MHz
PackageDPAK
Current Rating-6A
MountingSurface Mount
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Technical Specifications
Diodes ZXT951KTC technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
-6A
Current Rating
-6A
Emitter Base Voltage (VEBO)
-7V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
2.39mm
Lead Free
Lead Free
Length
6.73mm
Max Breakdown Voltage
60V
Max Collector Current
6A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
4.2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
120MHz
DC Rated Voltage
-60V
Weight
0.009185oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXT951KTC Datasheet
Download the complete datasheet for Diodes ZXT951KTC to view detailed technical specifications.
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