PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a maximum collector current of 5A and a collector-emitter breakdown voltage of 100V. Offers a maximum power dissipation of 4.2W and a transition frequency of 125MHz. Packaged in a DPAK-3 (TO-252-3) case with 2 pins, this lead-free and RoHS compliant component operates from -55°C to 150°C.
Diodes ZXT953KTC technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -335mV |
| Collector-emitter Voltage-Max | 390mV |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 125MHz |
| Height | 2.39mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | -100V |
| Weight | 0.009185oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXT953KTC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.