Dual NPN/PNP silicon bipolar junction transistor for surface mount applications. Features a 20V collector-emitter breakdown voltage, 3.8A continuous collector current, and a 180MHz gain-bandwidth product. Operates from -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in a DFN3020B-8 plastic package.
Frequency140MHz
PackageDFN
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZXTC6718MCTA technical specifications.
General
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | -25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -225mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 3.8A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 180MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTC6718MCTA Datasheet
Download the complete datasheet for Diodes ZXTC6718MCTA to view detailed technical specifications.
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