NPN/PNP silicon bipolar junction transistor (BJT) with 4A continuous collector current and 40V collector-emitter breakdown voltage. Features a 165MHz gain bandwidth product and 190MHz transition frequency. Packaged in a DFN surface mount configuration with 2 elements and 8 pins. Operates from -55°C to 150°C with a maximum power dissipation of 2.45W. RoHS compliant.
Frequency165MHz
PackageDFN
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZXTC6719MCTA technical specifications.
General
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 10mV |
| Collector-emitter Voltage-Max | 320mV |
| Continuous Collector Current | 4A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 165MHz |
| Gain Bandwidth Product | 165MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 2.45W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 190MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTC6719MCTA Datasheet
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