PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 12V collector-emitter breakdown voltage and a continuous collector current of -4A. Offers a maximum power dissipation of 1.7W and a transition frequency of 110MHz. Packaged in tape and reel, this lead-free and RoHS compliant component operates from -55°C to 150°C.
Current Rating-4A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZXTD1M832TA technical specifications.
General
| Collector Base Voltage (VCBO) | -20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -240mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 110MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -12V |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTD1M832TA Datasheet
Download the complete datasheet for Diodes ZXTD1M832TA to view detailed technical specifications.
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