
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3.5A and a collector-emitter breakdown voltage of 20V. Offers a collector-emitter saturation voltage of -240mV and a transition frequency of 180MHz. Packaged in a 3mm x 2mm MLP832 surface-mount package with 10 pins. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Diodes ZXTD2M832TA technical specifications.
| Collector Base Voltage (VCBO) | -25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -240mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -3.5A |
| Current Rating | -3.5A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 180MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | -20V |
| Width | 2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTD2M832TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
