ZXTDAM832TA

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 4.5A, collector-emitter breakdown voltage of 15V, and a transition frequency of 120MHz. This surface mount device offers a maximum power dissipation of 1.7W and operates within a temperature range of -55°C to 150°C. The component is housed in an 8-pin MLP package measuring 3 x 2 x 1 mm and is RoHS compliant and lead-free.