NPN bipolar junction transistor featuring 3.5A maximum collector current and 80V collector-emitter breakdown voltage. This single-element silicon transistor operates with a transition frequency of 160MHz and a maximum power dissipation of 3W. Designed for surface mounting in a 2mm x 2mm x 1mm MLP322 package with 5 pins, it offers a wide operating temperature range from -55°C to 150°C and is lead-free and RoHS compliant.
Frequency160MHz
Current Rating3.5A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTEM322TA technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 325mV |
| Current Rating | 3.5A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 3W |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 80V |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTEM322TA Datasheet
Download the complete datasheet for Diodes ZXTEM322TA to view detailed technical specifications.
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