NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a maximum collector current of 4.5A and a collector-emitter breakdown voltage of 12V. Offers a maximum power dissipation of 2W and a transition frequency of 220MHz. Packaged in a 3-pin SOT-23F with tape and reel availability. RoHS compliant and lead-free.
Frequency220MHz
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes ZXTN07012EFFTA technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 320mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 320mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 220MHz |
| Gain Bandwidth Product | 220MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4.5A |
| Max Frequency | 220MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 220MHz |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN07012EFFTA Datasheet
Download the complete datasheet for Diodes ZXTN07012EFFTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.