NPN bipolar junction transistor (BJT) for small signal applications. Features a maximum collector current of 6.5A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 160MHz. Packaged in a SOT-23-3 surface-mount case with 3 pins. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
Frequency160MHz
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN19020DFFTA technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 190mV |
| Collector-emitter Voltage-Max | 190mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 160MHz |
| Height | 1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 6.5A |
| Max Frequency | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN19020DFFTA Datasheet
Download the complete datasheet for Diodes ZXTN19020DFFTA to view detailed technical specifications.
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