NPN bipolar junction transistor (BJT) for surface mount applications. Features a maximum collector current of 9A and a collector-emitter breakdown voltage of 20V. Offers a gain bandwidth product and transition frequency of 160MHz, with a maximum power dissipation of 5.3W. Packaged in a SOT-223 case, this silicon transistor operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
Frequency160MHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN19020DGTA technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 160MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 9A |
| Max Frequency | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.3W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN19020DGTA Datasheet
Download the complete datasheet for Diodes ZXTN19020DGTA to view detailed technical specifications.
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