NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 5.5A. Offers a 130MHz transition frequency and a low 175mV collector-emitter saturation voltage. Packaged in a SOT-23-3 surface-mount case, this silicon transistor operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
Frequency130MHz
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN19060CFFTA technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 175mV |
| Collector-emitter Voltage-Max | 175mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 130MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5.5A |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN19060CFFTA Datasheet
Download the complete datasheet for Diodes ZXTN19060CFFTA to view detailed technical specifications.
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