NPN bipolar junction transistor in a SOT-89 package, featuring a 60V collector-emitter breakdown voltage and a 5A continuous collector current. This silicon transistor offers a maximum power dissipation of 2.1W and a transition frequency of 130MHz. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency130MHz
PackageSOT-89
Current Rating5A
MountingSurface Mount
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Technical Specifications
Diodes ZXTN2010ZTA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
230mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
230mV
Continuous Collector Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
7V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.6mm
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
60V
Max Collector Current
5A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2.1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
60V
Weight
0.001834oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTN2010ZTA Datasheet
Download the complete datasheet for Diodes ZXTN2010ZTA to view detailed technical specifications.
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