
NPN silicon bipolar junction transistor in a 3-pin SOT-23 surface mount package. Features a continuous collector current of 6A, collector-emitter breakdown voltage of 12V, and a maximum power dissipation of 1.25W. Offers a minimum DC current gain (hFE) of 500 and a transition frequency of 260MHz. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Diodes ZXTN25012EFHTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 190mV |
| Collector-emitter Voltage-Max | 190mV |
| Continuous Collector Current | 6A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 260MHz |
| Height | 1mm |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 6A |
| Max Frequency | 260MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 260MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTN25012EFHTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
