Diodes
ZXTN25012EFLT
DIODES INC. ZXTN25012EFLT Bipolar (BJT) Single Transistor, High Gain, NPN, 12 V, 260 MHz, 350 mW, 5 A, 800
PackageSOT-23
PolarityNPN
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Technical Specifications
Diodes ZXTN25012EFLT technical specifications.
General
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Packaging | Cut Tape |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| Transition Frequency | 260MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN25012EFLT Datasheet
Download the complete datasheet for Diodes ZXTN25012EFLT to view detailed technical specifications.
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