
NPN bipolar junction transistor in a SOT-23 package, featuring a 4.5A maximum collector current and a 20V collector-emitter breakdown voltage. This silicon transistor offers a 215MHz transition frequency and a 265mV collector-emitter saturation voltage. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.81W. It is lead-free, RoHS compliant, and REACH SVHC compliant.
Diodes ZXTN25020DFHTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 265mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 265mV |
| Current Rating | 4.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 215MHz |
| Gain Bandwidth Product | 215MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.81W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.81W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 215MHz |
| DC Rated Voltage | 20V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTN25020DFHTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
