NPN bipolar junction transistor featuring a 4A continuous collector current and 40V collector-emitter breakdown voltage. This silicon transistor offers a 190MHz transition frequency and a minimum hFE of 300. Packaged in a 3-pin SOT-23 surface-mount case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W. The component is lead-free and RoHS compliant.
Frequency190MHz
PackageSOT-23
Current Rating4A
MountingSurface Mount
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Technical Specifications
Diodes ZXTN25040DFHTA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
130V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
210mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
190mV
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
7V
Frequency
190MHz
Gain Bandwidth Product
190MHz
Height
1mm
hFE Min
300
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
40V
Max Collector Current
4A
Max Frequency
190MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.81W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
190MHz
DC Rated Voltage
40V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTN25040DFHTA Datasheet
Download the complete datasheet for Diodes ZXTN25040DFHTA to view detailed technical specifications.
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