NPN bipolar junction transistor in SOT-23 package, featuring a 50V collector-emitter breakdown voltage and 4A continuous collector current. This silicon transistor offers a maximum power dissipation of 1.25W and a minimum hFE of 300, with a transition frequency of 200MHz. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOT-23
Current Rating4A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN25050DFHTA technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 260mV |
| Collector-emitter Voltage-Max | 210mV |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN25050DFHTA Datasheet
Download the complete datasheet for Diodes ZXTN25050DFHTA to view detailed technical specifications.
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