NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and a 5A maximum collector current. Offers a 150V collector-base voltage and a 7V emitter-base voltage. Operates with a 305mV collector-emitter saturation voltage and a 185MHz transition frequency. Packaged in SOT-89 with 3 pins, this component supports a wide operating temperature range from -55°C to 150°C and has a maximum power dissipation of 4.46W.
Frequency185MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN25060BZTA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 305mV |
| Collector-emitter Voltage-Max | 305mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 185MHz |
| Height | 1.6mm |
| Length | 4.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Frequency | 185MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.46W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 185MHz |
| Weight | 0.001834oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN25060BZTA Datasheet
Download the complete datasheet for Diodes ZXTN25060BZTA to view detailed technical specifications.
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