NPN bipolar junction transistor in SOT-23 package, featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 2.5A. This silicon transistor offers a 175MHz gain bandwidth product and a low collector-emitter saturation voltage of 330mV. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 1.81W. RoHS compliant and lead-free.
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN25100DFHTA technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 330mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 330mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 175MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.81W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 175MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN25100DFHTA Datasheet
Download the complete datasheet for Diodes ZXTN25100DFHTA to view detailed technical specifications.
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