NPN bipolar junction transistor (BJT) in a TO-252 surface-mount package. Features a 150V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 1A. Offers a maximum power dissipation of 3.8W and an operating temperature range of -55°C to 150°C. This silicon transistor is RoHS compliant and supplied on tape and reel.
PackageTO-252
MountingSurface Mount
PolarityNPN
Power3.8W
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Technical Specifications
Diodes ZXTN4004KTC technical specifications.
General
| Package/Case | TO-252 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 150V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 6.2mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Weight | 0.063493oz |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN4004KTC Datasheet
Download the complete datasheet for Diodes ZXTN4004KTC to view detailed technical specifications.
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