NPN bipolar junction transistor in SOT-23 package, featuring a 160V collector-emitter breakdown voltage and 600mA maximum collector current. This single-element silicon transistor operates with a 130MHz transition frequency and offers a wide temperature range from -55°C to 150°C. Surface mountable with 3 pins, it supports a maximum power dissipation of 330mW and is RoHS and REACH SVHC compliant.
Frequency130MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN5551FLTA technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| Height | 1.02mm |
| Length | 3.04mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN5551FLTA Datasheet
Download the complete datasheet for Diodes ZXTN5551FLTA to view detailed technical specifications.
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