The ZXTP03200BZTA is a PNP transistor with a maximum collector-emitter breakdown voltage of 200V and a continuous collector current of 2A. It has a gain bandwidth product of 105MHz and a maximum power dissipation of 1.1W. The transistor is packaged in a surface-mount SOT-89 package and is available in quantities of 1000 on tape and reel. It is compliant with RoHS and Reach SVHC regulations and has an operating temperature range of -55°C to 150°C.
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZXTP03200BZTA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 220V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 260mV |
| Collector-emitter Voltage-Max | 260mV |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 105MHz |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 105MHz |
| Weight | 0.004603oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTP03200BZTA Datasheet
Download the complete datasheet for Diodes ZXTP03200BZTA to view detailed technical specifications.
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