
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 20V. Offers a collector-emitter saturation voltage of -275mV and a transition frequency of 176MHz. Packaged in a 3-pin SOT-89 case, this component is lead-free, RoHS compliant, and operates within a temperature range of -55°C to 150°C.
Diodes ZXTP19020DZTA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -275mV |
| Collector-emitter Voltage-Max | 275mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 176MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 6A |
| Max Frequency | 176MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.46W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 176MHz |
| Weight | 0.001834oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP19020DZTA to view detailed technical specifications.
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