
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -4A. Offers a low collector-emitter saturation voltage of 75mV and a transition frequency of 180MHz. Packaged in a SOT-23F surface mount case, this 3-pin transistor operates from -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
Diodes ZXTP19060CFFTA technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 75mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 270mV |
| Continuous Collector Current | -4A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 4A |
| Max Frequency | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| Weight | 0.001721oz |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP19060CFFTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
