
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage and 2A maximum collector current. Offers a 142MHz transition frequency and a low collector-emitter saturation voltage of -275mV. Packaged in a compact SOT-23-3 surface-mount case, this lead-free component operates from -55°C to 150°C with a maximum power dissipation of 2W.
Diodes ZXTP19100CFFTA technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 110V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -275mV |
| Collector-emitter Voltage-Max | 275mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 142MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Frequency | 142MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 142MHz |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP19100CFFTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.