PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -5.5A and a collector emitter breakdown voltage of 30V. Offers a maximum power dissipation of 3W and a transition frequency of 110MHz. Packaged in a SOT-223 (TO-261AA) plastic/epoxy case with 4 pins, suitable for tape and reel packaging. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency110MHz
PackageSOT-223
Current Rating-5.5A
MountingSurface Mount
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Technical Specifications
Diodes ZXTP2008GTA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-210mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
210mV
Continuous Collector Current
-5.5A
Current Rating
-5.5A
Emitter Base Voltage (VEBO)
7V
Frequency
110MHz
Gain Bandwidth Product
110MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
30V
Max Collector Current
5.5A
Max Frequency
110MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
110MHz
DC Rated Voltage
-30V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTP2008GTA Datasheet
Download the complete datasheet for Diodes ZXTP2008GTA to view detailed technical specifications.
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