PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V collector-emitter breakdown voltage and a continuous collector current rating of -3.5A. Offers a low collector-emitter saturation voltage of -145mV and a transition frequency of 120MHz. Packaged in a 3-pin TO-226-3 (E-Line) through-hole mount configuration. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W.
Frequency120MHz
PackageTO-226-3
Current Rating-3.5A
MountingThrough Hole
Quick Jump:
Technical Specifications
Diodes ZXTP2012A technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -145mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 210mV |
| Continuous Collector Current | -3.5A |
| Current Rating | -3.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -60V |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTP2012A Datasheet
Download the complete datasheet for Diodes ZXTP2012A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
