PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -5.5A. Offers a maximum power dissipation of 3W and a transition frequency of 120MHz. Packaged in a TO-261AA (SOT-223) plastic/epoxy case with 4 pins, suitable for tape and reel packaging. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency120MHz
PackageSOT-223
Current Rating-5.5A
MountingSurface Mount
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Technical Specifications
Diodes ZXTP2012GTA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-195mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-5.5A
Current Rating
-5.5A
Emitter Base Voltage (VEBO)
7V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
60V
Max Collector Current
5.5A
Max Frequency
120MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
120MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTP2012GTA Datasheet
Download the complete datasheet for Diodes ZXTP2012GTA to view detailed technical specifications.
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