PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage and 5A continuous collector current. Offers a 125MHz transition frequency and a maximum power dissipation of 3W. Packaged in a TO-261AA (SOT-223) plastic/epoxy case with 4 pins, available on tape and reel. Compliant with RoHS and REACH SVHC standards.
Frequency125MHz
PackageSOT-223
Current Rating-5A
MountingSurface Mount
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Technical Specifications
Diodes ZXTP2013GTA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-240mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
340mV
Continuous Collector Current
-5A
Current Rating
-5A
Emitter Base Voltage (VEBO)
7V
Frequency
125MHz
Gain Bandwidth Product
125MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
100V
Max Collector Current
5A
Max Frequency
125MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
125MHz
DC Rated Voltage
-100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTP2013GTA Datasheet
Download the complete datasheet for Diodes ZXTP2013GTA to view detailed technical specifications.
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