
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 20V. Offers a transition frequency of 290MHz and a collector-emitter saturation voltage of 260mV. Packaged in a SOT-23 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
Diodes ZXTP25020DFLTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 260mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 260mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 290MHz |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1.5A |
| Max Frequency | 290MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 290MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP25020DFLTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.