
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a continuous collector current of -3A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 270MHz. Designed for a maximum power dissipation of 1.25W, operating from -55°C to 150°C. Lead-free and RoHS compliant.
Diodes ZXTP25040DFHTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -220mV |
| Collector-emitter Voltage-Max | 220mV |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 270MHz |
| Height | 1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 270MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP25040DFHTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
