
PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-23 surface mount package. Features a 40V Collector-Emitter Breakdown Voltage (VCEO), 1.5A continuous collector current (IC), and a 270MHz transition frequency. Offers a low Collector-Emitter Saturation Voltage of -300mV. Operates from -55°C to 150°C with 350mW power dissipation. Lead-free and RoHS compliant.
Diodes ZXTP25040DFLTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 270MHz |
| Gain Bandwidth Product | 270MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1.5A |
| Max Frequency | 270MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP25040DFLTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
