
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage and a 2A maximum collector current. Offers a 200MHz transition frequency and a low collector-emitter saturation voltage of -215mV. Packaged in a 3-pin SOT-23, this RoHS compliant component operates from -55°C to 150°C.
Diodes ZXTP25100BFHTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -215mV |
| Collector-emitter Voltage-Max | 295mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.81W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP25100BFHTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
