
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 1A maximum collector current and 100V collector-emitter breakdown voltage. Operates with a 180MHz transition frequency and a maximum power dissipation of 1.81W. Packaged in a 3-pin SOT-23 surface-mount case, this lead-free component is RoHS and REACH SVHC compliant.
Diodes ZXTP25100CFHTA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 115V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -220mV |
| Collector-emitter Voltage-Max | 220mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Frequency | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.81W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP25100CFHTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
