PNP Silicon Bipolar Junction Transistor (BJT) with a 2A continuous collector current (I(C)) and 40V collector-emitter breakdown voltage (V(BR)CEO). This single-element, 3-terminal device features dual terminal positioning and operates across a temperature range from -55°C to 150°C.
Quick Jump:
Technical Specifications
Diodes ZXTP5240F-7 technical specifications.
General
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes ZXTP5240F-7 Datasheet
Download the complete datasheet for Diodes ZXTP5240F-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.