PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 12V collector-emitter voltage, 4.5A continuous collector current, and 2450mW power dissipation. Housed in a 3-pin DFN EP package with exposed pad, measuring 2x2x0.58mm, offering a 0.65mm pin pitch. Delivers high DC current gain up to 300 and a transition frequency of 110MHz. Operates across a wide temperature range from -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Diodes ZXTP717MA technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
DFN EP
Package Description
Dual Flat Package No Lead, Exposed Pad
Lead Shape
No Lead
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
2
Package Height (mm)
0.58
Seated Plane Height (mm)
0.6
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
12V
Maximum DC Collector Current
4.5A
Maximum Power Dissipation
2450mW
Minimum DC Current Gain
300@10mA@2V|300@100mA@2V|[email protected]@2V|60@8A@2V|45@10A@2V
Maximum Transition Frequency
110(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6M0U4
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Diodes ZXTP717MA Datasheet
Download the complete datasheet for Diodes ZXTP717MA to view detailed technical specifications.
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