PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -3.5A and a collector-emitter breakdown voltage of 20V. Operates with a maximum power dissipation of 3W and a transition frequency of 180MHz. Packaged in DFN EP with 3 pins, this silicon transistor is RoHS and REACH SVHC compliant, suitable for operation between -55°C and 150°C.
Frequency180MHz
PackageDFN EP
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZXTP718MATA technical specifications.
General
| Package/Case | DFN EP |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -3.5A |
| Emitter Base Voltage (VEBO) | -7.5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2.45W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTP718MATA Datasheet
Download the complete datasheet for Diodes ZXTP718MATA to view detailed technical specifications.
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