The 1N4447 is a silicon rectifier diode with a maximum operating temperature of 200 degrees Celsius. It features a breakdown voltage of at least 100 volts and a maximum reverse voltage of 100 volts. The diode has a maximum power dissipation of 0.5 watts and is packaged in the DO-204AH axial configuration.
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Technical Specifications
EIC Semiconductor 1N4447 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AH |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 100 |
| Power Dissipation-Max | 0.5 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor 1N4447 Datasheet
Download the complete datasheet for EIC Semiconductor 1N4447 to view detailed technical specifications.
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