The 1N5620 is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a DO-41 axial package with two terminals. The diode element is made of silicon and is a single-element rectifier diode. The maximum reverse voltage is 800 volts.
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Technical Specifications
EIC Semiconductor 1N5620 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-41 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor 1N5620 Datasheet
Download the complete datasheet for EIC Semiconductor 1N5620 to view detailed technical specifications.
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