The KBPC2502W is a 4-element silicon bridge rectifier diode from EIC Semiconductor. It features a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The diode element material is silicon and the diode type is a bridge rectifier diode. The package type is S-PUFM-W4, a 4-pin surface-mount package. The breakdown voltage is a minimum of 200V and the reverse voltage is a maximum of 200V.
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Technical Specifications
EIC Semiconductor KBPC2502W technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | UPPER |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 200 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor KBPC2502W Datasheet
Download the complete datasheet for EIC Semiconductor KBPC2502W to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.