The RBV1008D is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has a maximum reverse voltage of 800 volts and a breakdown voltage of 800 volts. The diode is a single element with a terminal position of single and is packaged in a 4-pin R-PSFM-T4 package. It is suitable for use in a variety of applications requiring a bridge rectifier diode.
Quick Jump:
Technical Specifications
EIC Semiconductor RBV1008D technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor RBV1008D Datasheet
Download the complete datasheet for EIC Semiconductor RBV1008D to view detailed technical specifications.
No datasheet is available for this part.