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Technical Specifications
EIC Semiconductor RBV810D technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor RBV810D Datasheet
Download the complete datasheet for EIC Semiconductor RBV810D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.