Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, 30V repetitive peak reverse voltage. Features silicon diode element material, 2 terminals, and a single element design. Operates within a temperature range of -55°C to 150°C. Packaged in a DO-214AA (SMB) JEDEC code with dual terminal position. Breakdown voltage ranges from a minimum of 33.3V to a maximum of 36.8V, with a nominal breakdown voltage of 35.7V.
PolarityUNIDIRECTIONAL
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Technical Specifications
EIC Semiconductor SMBJ30A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
30
Breakdown Voltage-Min
33.3
Non-rep Peak Rev Power Dis-Max
600
Breakdown Voltage-Nom
35.7
Breakdown Voltage-Max
36.8
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
not_compliant
Military Spec
False
Datasheet
EIC Semiconductor SMBJ30A Datasheet
Download the complete datasheet for EIC Semiconductor SMBJ30A to view detailed technical specifications.
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