Bidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, featuring a 60V repetitive peak reverse voltage. This silicon diode offers a breakdown voltage range from 66.7V to 73.7V, with a nominal breakdown voltage of 71.7V. Maximum clamping voltage is 96.8V. Designed with 2 terminals in a DO-214AA (SMB) package, it operates across a temperature range of -55°C to 150°C.
PolarityBIDIRECTIONAL
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Technical Specifications
EIC Semiconductor SMBJ60CA technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
60
Breakdown Voltage-Min
66.7
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
96.8
Breakdown Voltage-Nom
71.7
Breakdown Voltage-Max
73.7
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
not_compliant
Military Spec
False
Datasheet
EIC Semiconductor SMBJ60CA Datasheet
Download the complete datasheet for EIC Semiconductor SMBJ60CA to view detailed technical specifications.
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