N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 40A continuous collector current (I(C)) and a 4000V collector-emitter breakdown voltage (V(BR)CES). This discrete semiconductor component is housed in an I5PAK-3 package with three terminals, all in a single position. It operates with a maximum junction temperature of 125°C and contains a single element.
Quick Jump:
Technical Specifications
Littelfuse IXEL40N400 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Littelfuse IXEL40N400 Datasheet
Download the complete datasheet for Littelfuse IXEL40N400 to view detailed technical specifications.
No datasheet is available for this part.