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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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Active

Max Operating Temperature: 150

MOSFET N-Channel 600V 2A 56.8W TO-251-3 Through Hole

IN-LINE, R-PSIP-T3

Active

Package/Case: TO-251-3

Continuous Drain Current (ID): 2A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 325pF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

,

Active

Max Operating Temperature: 150